Parallel Flash

Part No.	W19B160B
Datasheet	W19B160B.pdf
Description	The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M x 8 or 1M x 16 bits. For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (x 16) data appears on DQ15-DQ0, and byte-wide (x 8) data appears on DQ7DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B160B results in fast program/erase operations with extremely low current consumption. The device can also be programmed and erased by using standard EPROM programmers.
Features	Manufactured on WinStack-S 0.13um process technology Operating Voltage: 3.0V (2.7V-3.6V) Organization: 2Mbx8 / 1Mbx16 Speed: 70ns Boot Block: Top / Bottom Secured Silicon Sector (256 Byte)
Diagram
Package	48-pin TSOP and 48-ball TFBGA (6x8mm)
Other Files	N/A
Development Tools	N/A
Others	N/A