Low Power DDR SDRAM

Part No.	W949D6B / W949D2B
Datasheet	Contact us: LPDRAM@winbond.com
Description	This is a 512Mb Low Power DDR SDRAM organized as 4M words x 4 banks x 32bits / 8M words x 4 banks x 16bits、or 16M words x 4 banks x 8bits It uses pipelined architecture and 90 nm process technology. The working voltage is 1.8V
Features	Power supply VDD = 1.7V~1.9V、VDDQ = 1.7V~1.9V Data width: x16 / x32 Burst Type: Sequential or Interleave、Clock rate : 166MHz Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Programmable output buffer driver strength Four internal banks for concurrent operation CAS Latency: 2 and 3 Burst Length: 2、4 and 8、and full page Operating Temperature Range、Commercial (0°C-70°C)、Extend (-25°C-85°C) Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Diagram	N/A
Package	KGD
Other Files	N/A
Development Tools	Verilog model, Denali SOMA Contact us: LPDRAM@winbond.com
Others	N/A