Pseudo SRAM

Part No.	W966D6E
Datasheet	N/A
Description	The W966D6E is a 64M byte、CMOS pseudo-static random access memories developed for low-power、portable applications、organized as 4 Meg x 16 bits. Develop for low power、portable application.
Features	Supports asynchronous and burst operations VCC、VCCQ Voltages:1.7V–1.95V VCC、1.7V–1.95V VCCQ Random access time: 70ns Burst mode READ and WRITE access: 4、8、16、or 32 words、or continuous burst Burst wrap or sequential、Max clock rate: 133 MHz (tCLK = 7.5ns) On-chip temperature compensated refresh (TCR) Partial array refresh (PAR) Deep power-down (DPD) mode Operating temperature rang: -30C~85C
Diagram	N/A
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Other Files	N/A
Development Tools	N/A
Others	N/A