Pseudo SRAM

Part No.	W968D6B
Datasheet	Contact us: PSRAM@winbond.com
Description	The W968D6B is a 256M byte CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
Features	Supports asynchronous, page, and burst operations VCC, VCCQ Voltages:1.7V–1.95V VCC, 1.7V–1.95V VCCQ Random access time: 70ns Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential, Max clock rate: 133 MHz (tCLK = 7.5ns) Burst initial latency: 39ns (4 clocks) @ 104 MHz, tACLK: 6ns at 133 MHz Page mode READ access:Sixteen-word page size, Interpage READ access: 70ns, Intrapage READ access: 20ns Low-power features: TCR, PAR, DPD
Diagram	N/A
Package	KGD
Other Files	N/A
Development Tools	Verilog model, Denali SOMA, IBIS model Contact us: PSRAM@winbond.com
Others	N/A