DDR SDRAM
| Part No. |
W9464G6IB |
| Datasheet |
W9464G6IB.pdf |
| Description |
The W9464G6IB is a 64M DDR SDRAM and speed involving -5 Status: Mass Production |
| Features |
- 2.5V ±0.2V Power Supply
- Up to 200 MHz Clock Frequency
- Double Data Rate architecture; two data transfers per clock cycle
- Differential clock inputs (CLK and /CLK)
- DQS is edge-aligned with data for Read; center-aligned with data for Write
- CAS Latency: 2, 2.5 and 3
- Burst Length: 2, 4 and 8
- Auto Refresh and Self Refresh
- Precharged Power Down and Active Power Down
- Write Data Mask
- Write Latency = 1
- 15.6μS refresh interval (4K/64 mS Refresh)
- Maximum burst refresh cycle: 8
- Interface: SSTL_2
|
| Diagram |
N/A |
| Package |
Packaged in 60 Ball TFBGA, using Lead free materials with RoHS compliant |
| Other Files |
N/A |
| Development Tools |
N/A |
| Others |
N/A |
Contact us: SDRAM@winbond.com
|