1Gb NAND + 1Gb LPDDR2

• 產品特點

  W29N01GW NAND Flash Memory

  Basic Features
  Density : 1Gbit (Single chip solution)
  Vcc : 1.7V to 1.95V
  Bus width : x16
  Operating temperature
  Industrial: - 40°C to 85°C
  Single-Level Cell (SLC) technology.
  Organization
  Density: 1G-bit/128M-byte
  Page size:1,056 words(1024 +32 words)
  Block size:64 pages(64K +2K words)
  Highest Performance
  Read performance (Max.)
  Random read: 25us
  Sequential read cycle: 35ns
  Write Erase performance
  Page program time: 300us(typ.)
  Block erase time: 2ms(typ.)
  Endurance 100K Erase/Program Cycles
  10-years data retention
  Command set
  Standard NAND command set
  Additional command support
  Sequential Cache Read
  Random Cache Read
  Cache Program
  Copy Back
  OTP Data Program, Data Lock by Page and Data Read
  Contact Winbond for block Lock feature
  Lowest power consumption
  Read: 10mA(typ.)
  Program/Erase: 10mA(typ.)
  CMOS standby: 10uA(typ.)

  W97AH6KB Low Power DDR2 SDRAM

  VDD1 = 1.7~1.95V
  VDD2/VDDCA/VDDQ = 1.14V ~ 1.30V
  Data width: x16
  Clock rate: up to 533MHz
  Four-bit prefetch DDR architecture
  Eight internal banks for concurrent operation
  Programmable READ and WRITE latencies (RL/WL)
  Programmable burst lengths: 4, 8, or 16
  Per Bank Refresh
  Partial Array Self-Refresh(PASR)
  Deep Power Down Mode (DPD Mode)
  Programmable output buffer driver strength
  Data mask (DM) for write data
  Clock Stop capability during idle periods
  Double data rate for data output
  Differential clock inputs
  Bidirectional differential data strobe
  Interface: HSUL_12
  JEDEC LPDDR2-S4B compliance
  Support package:
  Operating Temperature Range
  -40 ~ 85 °C

Package

8x8x0.8