首頁

虚拟静态随机存取内存

PSRAM(虚拟静态随机存取记忆体)是由一个DRAM主体核心与传统SRAM介面所组成。晶片上的刷新电路,可省略使用者需要记忆体刷新的考量。相对于传统的CMOS SRAM,PSRAM具有更高容量,高速度,更小的晶片尺寸,以及与DRAM相容的优势。

附注: 如果有KGD的需求, 请连络我们

Density

Part No. Voltage Speed Temp. Organization Status Industrial & Commercial
Datasheet
Automotive Industrial & Commercial
W968D6DAG 1.8V/1.8V 133Mbps -40℃~85℃ 16Mb x16 CRAM - N pdf
W958D6DBC 1.8V/1.8V 133Mbps -40℃~85℃ 16Mb x16 CRAM-ADM - N pdf
Status1:P= Mass Production, S (Time)= Samples (Ready Time), UD (Time)= Under Development (Ready Time), N= Not recommended for new designs
Status2:All Winbond products are "Green", Halogen-Free and RoHS compliant packaging. Refer to the datasheet for details and specifications.

Technical Documentation

Resources

联系我们

Copyright © Winbond All Rights Reserved.

本网站使用cookie作为与网站互动时识别浏览器之用,浏览本网站即表示您同意本网站对cookie的使用及相关隐私权政策
OK