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マルチチップパッケージ(MCP)

1Gb NAND + 512Mb LPDDR2

Density Flash 1Gb Vcc Flash 1.7V - 1.95V
DRAM 512Mb DRAM VDD1 = 1.7V - 1.95V
VDD2/VDDCA/VDDQ = 1.14V - 1.30V
Frequency Flash 29MHz Temperature Range Flash -40°C ~ 85°C
DRAM up to 400MHz DRAM -40°C ~ 85°C
Status Mass Production Package 8x8x0.8
Feature List Flash 2KB Page Size and 64B Spare Area
Support OTP Memory Area
DRAM Burst Type: Sequential or Interleave
Standard Self Refresh Mode
Burst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode, DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver
Datasheet オンライン購入

Technical Documentation

Resources

Video

Winbond Embedded World 2018_Flash Memory

  • File Type:Video
  • Updated:26/06/2018
Video

Winbond embedded world 2018_Flash Memory Highlight

  • File Type:Video
  • Updated:26/06/2018
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