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2Gb NAND + 2Gb LPDDR2

DensityFlash2GbVccFlash1.7V - 1.95V
DRAM2GbDRAMVDD1 = 1.7 - 1.95V
VDD2/VDDCA/VDDQ = 1.14V - 1.30V
FrequencyFlash40MHzTemperature RangeFlash-40°C ~ 85°C
DRAMup to 400MHzDRAM-40°C ~ 85°C
Industrial StatusUnder DevelopmentPackage8x10.5x1.0
Feature ListFlash2KB Page Size and 128B Spare Area
Support OTP Memory Area
DRAMBurst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode, DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

Technical Documentation

Resources

Video

Winbond Embedded World 2018_Flash Memory

  • File Type:Video
  • Updated:26/06/2018
Video

Winbond embedded world 2018_Flash Memory Highlight

  • File Type:Video
  • Updated:26/06/2018
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