4Gb NAND + 2Gb LPDDR2
| Density | Flash | 4Gb | Vcc | Flash | 1.7V - 1.95V |
|---|---|---|---|---|---|
| DRAM | 2Gb | DRAM | VDD1 = 1.7 - 1.95V VDD2/VDDCA/VDDQ = 1.14V - 1.30V | ||
| Frequency | Flash | 40MHz | Temperature Range | Flash | -40°C ~ 85°C |
| DRAM | up to 400MHz | DRAM | -40°C ~ 85°C | ||
| Industrial Status | Not Recommended For New Design | Package | 8x10.5x1.0 | ||
| Feature List | Flash | 4KB Page Size and 256B Spare Area Support OTP Memory Area | |||
| DRAM | Burst Type: Sequential or Interleave Standard Self Refresh Mode PASR, ATCSR, Power Down Mode, DPD Programmable output buffer driver strength Four internal banks for concurrent operation Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver | ||||
