1Gb NAND + 512Mb LPDDR1

• 产品特点

  W29N01GZ NAND Flash Memory

  Basic Features
  Density : 1Gbit (Single chip solution)
  Vcc : 1.7V to 1.95V
  Bus width : x8
  Operating temperature
  Industrial: - 40°C to 85°C
  Single-Level Cell (SLC) technology.
  Organization
  Density: 1G-bit/128M-byte
  Page size:1,056 words(1024 +32 words)
  Block size:64 pages(64K +2K words)
  Highest Performance
  Read performance (Max.)
  Random read: 25us
  Sequential read cycle: 35ns
  Write Erase performance
  Page program time: 300us(typ.)
  Block erase time: 2ms(typ.)
  Endurance 100K Erase/Program Cycles
  10-years data retention
  Command set
  Standard NAND command set
  Additional command support
  Sequential Cache Read
  Random Cache Read
  Cache Program
  Copy Back
  OTP Data Program, Data Lock by Page and Data Read
  Contact Winbond for block Lock feature
  Lowest power consumption
  Read: 10mA(typ.)
  Program/Erase: 10mA(typ.)
  CMOS standby: 10uA(typ.)
  

  W949D2KK Low Power DDR SDRAM

  Voltage Supply
  VDD = 1.7~1.95V
  VDDQ = 1.7~1.95V
  Data width: x32
  Clock rate: 200MHz (-5),166MHz (-6)
  Standard Self Refresh Mode
  Partial Array Self-Refresh(PASR)
  Auto Temperature Compensated Self-Refresh(ATCSR)
  Power Down Mode
  Deep Power Down Mode (DPD Mode)
  Programmable output buffer driver strength
  Four internal banks for concurrent operation
  Data mask (DM) for write data
  Clock Stop capability during idle periods
  Auto Pre-charge option for each burst access
  Double data rate for data output
  Differential clock inputs (CK and #CK)
  Bidirectional, data strobe (DQS)
  #CAS Latency: 2 and 3
  Burst Length: 2, 4, 8 and 16
  Burst Type: Sequential or Interleave
  64 ms Refresh period
  Interface: LVCMOS compatible
  Operating Temperature Range
  - Industrial (-40°C ~ 85°C)

Package

8x9x1.0