1Gb NAND + 512Mb LPDDR1

• Features

  W29N01GW NAND Flash Memory
  • Basic Features
  – Density : 1Gbit (Single chip solution)
  – Vcc : 1.7V to 1.95V
  – Bus width : x16
  – Operating temperature
     Industrial: - 40°C to 85°C
  • Single-Level Cell (SLC) technology.
  • Organization
  – Density: 1G-bit/128M-byte
  – Page size:1,056 words(1024 +32 words)
  – Block size:64 pages(64K +2K words)
  • Highest Performance
  – Read performance (Max.)
     Random read: 25us
     Sequential read cycle: 35ns
  – Write Erase performance
     Page program time: 300us(typ.)
     Block erase time: 2ms(typ.)
  – Endurance 100K Erase/Program Cycles
  – 10-years data retention
  • Command set
  – Standard NAND command set
  – Additional command support
     Sequential Cache Read
     Random Cache Read
     Cache Program
     Copy Back
     OTP Data Program, Data Lock by Page and Data Read
  – Contact Winbond for block Lock feature
  • Lowest power consumption
  – Read: 10mA(typ.)
  – Program/Erase: 10mA(typ.)
  – CMOS standby: 10uA(typ.)

  W949D6KK Low Power DDR SDRAM
  • Voltage Supply
  - VDD = 1.7~1.95V
  - VDDQ = 1.7~1.95V;
  • Data width: x16
  • Clock rate: 200MHz (-5),166MHz (-6)
  • Standard Self Refresh Mode
  • Partial Array Self-Refresh(PASR)
  • Auto Temperature Compensated Self-Refresh(ATCSR)
  • Power Down Mode
  • Deep Power Down Mode (DPD Mode)
  • Programmable output buffer driver strength
  • Four internal banks for concurrent operation
  • Data mask (DM) for write data
  • Clock Stop capability during idle periods
  • Auto Pre-charge option for each burst access
  • Double data rate for data output
  • Differential clock inputs (CK and #CK)
  • Bidirectional, data strobe (DQS)
  • #CAS Latency: 2 and 3
  • Burst Length: 2, 4, 8 and 16
  • Burst Type: Sequential or Interleave
  • 64 ms Refresh period
  • Interface: LVCMOS compatible
  • Operating Temperature Range
  - Industrial (-40°C ~ 85°C)

Package

8x9x1.0