2Gb NAND + 1Gb LPDDR1
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產品特點
W29N02GW NAND Flash Memory
Basic Features
Density : 2Gbit (Single chip solution)
Vcc : 1.7V to 1.95V
Bus width : x16
Operating temperature
Industrial: -40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 2G-bit/256M-byte
Page size
1,056 words (1024 + 32 words)
Block size
64 pages (64K + 2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 25ns
Write Erase performance
Page program time: 250us(typ.)
Block erase time: 2ms(typ.)
Endurance 100,000 Erase/Program Cycles
10-years data retention
Command set
Standard NAND command set
Additional command support
Copy Back
Two-plane operation
Contact Winbond for OTP feature
Contact Winbond for block Lock feature
Lowest power consumption
Read: 25mA(typ.3V),T.B.D(typ.1.8V)
Program/Erase: 10mA(typ.1.8V)
CMOS standby: 10uA(typ.)W94AD6KK Low Power DDR SDRAM
VDD = 1.7~1.95V
VDDQ = 1.7~1.95V;
Data width: x16
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self-Refresh(ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and CK)
Bidirectional, data strobe (DQS)
CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
64 ms Refresh period
Interface: LVCMOS compatible
Support KGD(Known Good Die) form
Operating Temperature Range
Industrial: -40°C to 85°C
- Package
- 8x9x1.0