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低功耗雙存取同步动态随机存取内存-第三代

This is a 4Gb Low Power DDR3 SDRAM organized as 16M words x 8 banks x 32bits

Density 4Gb Status Mass Production
Vcc 1.8V / 1.2V Frequency 800/933MHz
Package 178BGA Tempture Range -25~85c / -40~85c
Feature List 8 internal banks for concurrent operation
Burst length: 8
Per Bank Refresh
Partial Array Self-Refresh(PASR)
On-die termination (ODT)
Deep Power Down Mode (DPD Mode)
Programmable Read and Write Latencies (RL/WL)
Bidirectional differential data strobe
Datasheet 线上购买

Technical Documentation

Resources

Product Brief

Specialty DRAM and Mobile DRAM

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  • File Type:pdf
  • Updated:27/05/2020
Video

Ultra Low Power DRAM A “Green” Memory in IoT Devices

  • File Type:Video
  • Updated:11/12/2018
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