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低功耗單存取同步動態隨機存取記憶體

This is a 512Mb Low Power SDR SDRAM organized as 8M words x 4 banks x 16bits

Density 512Mb Industrial & Commercial Status Not Recommend for New Design
Vcc 1.8V/1.8V Frequency 133/ 166 MHz
Package 54VFBGA Temperature Range -25~85c / -40~85c
Feature List Burst Type: Sequential or Interleave,Standard Self Refresh Mode, PASR、ATCSR、Power Down Mode、DPD, Programmable output buffer driver strength, Four internal banks for concurrent operation,Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver,Note: K-Die keeps supporting but D-Die is suggested for the new design
Datasheet 線上購買

Technical Documentation

Resources

Product Brief

Specialty DRAM and Mobile DRAM

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  • File Type:pdf
  • Updated:27/05/2020
Video

Ultra Low Power DRAM A “Green” Memory in IoT Devices

  • File Type:Video
  • Updated:11/12/2018
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