1Gb NAND + 512Mb LPDDR1
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Features
W29N01GZ NAND Flash Memory
• Basic Features
– Density : 1Gbit (Single chip solution)
– Vcc : 1.7V to 1.95V
– Bus width : x8
– Operating temperature
Industrial: - 40°C to 85°C
• Single-Level Cell (SLC) technology.
• Organization
– Density: 1G-bit/128M-byte
– Page size:1,056 words(1024 +32 words)
– Block size:64 pages(64K +2K words)
• Highest Performance
– Read performance (Max.)
Random read: 25us
Sequential read cycle: 35ns
– Write Erase performance
Page program time: 300us(typ.)
Block erase time: 2ms(typ.)
– Endurance 100K Erase/Program Cycles
– 10-years data retention
• Command set
– Standard NAND command set
– Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
OTP Data Program, Data Lock by Page and Data Read
– Contact Winbond for block Lock feature
• Lowest power consumption
– Read: 10mA(typ.)
– Program/Erase: 10mA(typ.)
– CMOS standby: 10uA(typ.)W949D2KK Low Power DDR SDRAM
• Voltage Supply
- VDD = 1.7~1.95V
- VDDQ = 1.7~1.95V;
• Data width: x32
• Clock rate: 200MHz (-5),166MHz (-6)
• Standard Self Refresh Mode
• Partial Array Self-Refresh(PASR)
• Auto Temperature Compensated Self-Refresh(ATCSR)
• Power Down Mode
• Deep Power Down Mode (DPD Mode)
• Programmable output buffer driver strength
• Four internal banks for concurrent operation
• Data mask (DM) for write data
• Clock Stop capability during idle periods
• Auto Pre-charge option for each burst access
• Double data rate for data output
• Differential clock inputs (CK and #CK)
• Bidirectional, data strobe (DQS)
• #CAS Latency: 2 and 3
• Burst Length: 2, 4, 8 and 16
• Burst Type: Sequential or Interleave
• 64 ms Refresh period
• Interface: LVCMOS compatible
• Operating Temperature Range
- Industrial (-40°C ~ 85°C)
- Package
- 8x9x1.0