Winbond W25QxxNE 1.2V and W25QxxND extended 1.5V parts are the industry’s lowest NOR Flash voltages in 8-pin packages, these newest members of the SpiFlash family provide designers with serial flash memories for mobile, wearable, IoT and other demanding applications that call for low power in small packages. Their low voltages and 52 megabytes per second transfer rate make the new SpiFlash memories optimal for a broad range of consumer and industrial applications.

The new 1.2V and extended 1.5V parts are supplied in 2mm x 3mm USON8, a narrow 150mil SOP8, WSON 6x5mm package and KGD (Known Good Die). The 104MHz speed of the W25QxxNE and W25QxxND series also support operation via standard, dual and quad Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI). This provides designers with the flexibility to use low-voltage and low-power serial Flash devices to simplify their power circuitry, with the additional benefit of saving power.

Key Features:

Low Power, Wide Temperature Range
– Single 1.14V to 1.3V supply for 1.2V family
– Single 1.14V to 1.6V supply for extended 1.5V family
– 2mA active current
– < 0.5μA Power-down current
– -40°C to +85°C operating range

Flexible Architecture with 4KB sectors
– Uniform sector erase (4K-bytes)
– Uniform block erase (32K and 64K-bytes)
– Programmable one to 256 bytes
– Erase/Program Suspend & Resume

High-Performance Serial Flash
– Single, dual or quad SPI and QPI
– 104MHz clock frequency that can support up to 52Mbytes per second data transfer rates

Space Efficient Packaging
– 8-pin SOIC 150mil
– USON8 2X3mm
– 8-ball WLCSP
– KGD

Lower Power Consumption

The reduced power usage in both active and stand-by modes offered by the W25QxxNE series enables system designers to increase battery run-time between charges, or to reduce the size and weight of the battery.

The W25Q80NE, an 8Mbit NOR Flash IC operating from a 1.2V supply, offers a typical power saving in active mode of 33% over the equivalent 1.8V part.

The new devices also provide additional advantages. The first is the power circuit which benefits from reduced noise coupling in the traces connecting the memory to the host SoC or processor, a direct result of the reduced power that they carry. This can help ease the requirement to implement noise mitigation measures such as shielding, and to improve the performance of noise-sensitive elements of the circuit.

The other principal advantage of the 1.2V devices is the potential, over time, to simplify the power circuit.

Part No.DensityVoltageSpeedTemp.OrganizationStatusAutomotive
W25Q64NE 64Mbit(8MB) 1.2V 104MHz  -40℃ ~85℃ 32768 pages, 4KB sectors, 32/64KB blocks, Dual/Quad SPI, QPI, Enhanced3 UD UD
W25Q32NE 32Mbit(4MB) 1.2V  104MHz  -40℃ ~85℃ 16384 pages, 4KB sectors, 32/64KB blocks, Dual/Quad SPI, QPI, Enhanced3 UD UD
W25Q16NE 16Mbit(2MB) 1.2V  104MHz  -40℃ ~85℃ 8192 pages, 4KB sectors, 32/64KB blocks, Dual/Quad SPI, QPI, Enhanced3 UD  UD 
W25Q80NE 8Mbit(1MB) 1.2V  104MHz  -40℃ ~85℃ 4096 pages, 4KB sectors, 32/64KB blocks, Dual/Quad SPI, Fast Write, Enhanced3 UD 
W25Q40NE 4Mbit(512KB) 1.2V  104MHz  -40℃ ~85℃ 2048 pages, 4KB sectors, 32/64KB blocks, Dual SPI UD  UD 
W25Q20NE 2Mbit(256KB) 1.2V  104MHz  -40℃ ~85℃ 1024 pages, 4KB sectors, 32/64KB blocks, Dual SPI UD  UD 

Status1:P= Mass Production, S(Time)=Samples(Ready Time), UD (Time)= Under Development(Ready Time), N=Not Recommended For New Design, EOL=End of life.

Status2:All winbond Flash products are "Green", Halogen-Free and RoHS compliant packaging. Refer to the datasheet for details and specifications.

Enhanced3= SFDP, Security Registers, Program/Erase Suspend/Resume, Word Read Quad I/O, Burst Read with Wrap, Non-Volatile & Volatile Registers, Complement Array Protection