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The W9812G6JB is a 128M SDRAM and speed involving -6/-6I/-6J

Density 128Mb Industrial & Commercial Status Mass Production
Vcc 3.3V±0.3V Frequency 166 / 200Mbps
Package TFBGA 54 Temperature Range C-temp, I-temp
Feature List The W9812G6JB is a 128M SDRAM and speed involving -6/-6I/-6J
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Technical Documentation

Resources

Winbond Introduces Innovative CUBE Architecture for Powerful Edge AI Devices

Product Press
CUBE enhances the performance of front-end 3D structures such as chip on wafer (CoW) and wafer on wafer (WoW), as well as back-end 2.5D/3D chip on Si-interposer on substrate and fan-out solutions. Designed to meet the growing demands of edge AI computing devices, it is compatible with memory density from 256Mb to 8Gb with a single die, and it can also be 3D stacked to enhance bandwidth while reducing data transfer power consumption.
CUBE, 3DCaaS, Edge_AI , High_Bandwidth

Winbond and Mobiveil Collaborate on Ultra-Low Power Applications

Product Press
Winbond HYPERRAM™ delivers low power and low pin count, speeds graphics, and optimizes UI display refresh, Mobiveil’s HYPERRAM Controller IP enables SoC Designers to leverage Winbond’s HYPERBUS based HYPERRAM x8/x16 - 250 MHz Memory, Mobiveil has adapted its HYPERRAM™ Controller to leverage the unique characteristics of Winbond's new HYPERRAM device that reaches speeds of up to 250MHz and supports densities from 32Mb to 512Mb in x8/x16 modes. Integrating Mobiveil's HYPERRAM controller to interface with Winbond's 250MHz HYPERRAM device will provide SoC designers with high performance at very low power.
HYPERRAM, Mobiveil, HYPERBUS, Ultra-LowPower, AHB-Lite

DRAM Flyer

Product Brief
DRAM, Flyer, SpecialtyDRAM, MobileDRAM
  • File Type：PDF
  • Updated：Tue Feb 21 14:57:46 CST 2023
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