HOME
Main Image

4Gb NAND + 2Gb LPDDR2

DensityFlash4GbVccFlash1.7V - 1.95V
DRAM2GbDRAMVDD1 = 1.7 - 1.95V
VDD2/VDDCA/VDDQ = 1.14V - 1.30V
FrequencyFlash40MHzTemperature RangeFlash-40°C ~ 85°C
DRAMup to 400MHzDRAM-40°C ~ 85°C
Industrial StatusMass ProductionPackage8x10.5x1.0
Feature ListFlash4KB Page Size and 256B Spare Area
Support OTP Memory Area
DRAMBurst Type: Sequential or Interleave
Standard Self Refresh Mode
PASR, ATCSR, Power Down Mode, DPD
Programmable output buffer driver strength
Four internal banks for concurrent operation
Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver

Technical Documentation

Resources

Video

Winbond Embedded World 2018_Flash Memory

  • File Type:Video
  • Updated:26/06/2018
Video

Winbond embedded world 2018_Flash Memory Highlight

  • File Type:Video
  • Updated:26/06/2018
TOP

Copyright © Winbond All Rights Reserved.

This website uses cookies to ensure you get the best experience on our website. Learn more
OK