EnglishThe W25N-LV series supports mainstream 4KB page requirements with capacities in 4Gb and 8Gb. Delivering 66 MB/s throughput, it offers efficient array access via Continuous and Sequential Read modes. Operating at a 3V supply with low active and standby power consumption, the series features advanced Bad Block Management (BBM), which uses a lookup table to replace bad blocks with reserved good blocks, ensuring a continuous and reliable memory map for users. The W25N-LV series provides reliable, high-endurance storage in compact packages across wide temperature ranges of −40 °C to 105 °C.
Characteristics
- Voltage: 3V
- Density: 2Gb, 4Gb, 8Gb
- Interface: SPI, Dual, Quad
- Page size:
- 2Gb: 2048 + 128 byte
- 4Gb, 8Gb: 4096 + 256 byte
- Speed: STR 133MHz, DTR 66MHz
- Features:
- Bad Block Management Lookup Table (BBM LUT)
- Small form factor
- Front 1,024 good blocks
- Factory Program Mode (FPM)
- Advanced Continuous Read
- Buffer and Sequential Read mode
- Read level setting for Read Retry
- Automotive grade 1 and 2
Target Applications
- Automotive
- Machine-to-Machine (M2M)
- Automation
- Surveillance
- xDSL and Gigabit Passive Optical Network (GPON)
- Smart home
