1Gb NAND + 512Mb LPDDR2

• 产品特点

  W29N01GW NAND Flash Memory

  Basic Features
  Density : 1Gbit (Single chip solution)
  Vcc : 1.7V to 1.95V
  Bus width : x16
  Operating temperature
  Industrial: - 40°C to 85°C
  Single-Level Cell (SLC) technology.
  Organization
  Density: 1G-bit/128M-byte
  Page size:1,056 words(1024 +32 words)
  Block size:64 pages(64K +2K words)
  Highest Performance
  Read performance (Max.)
  Random read: 25us
  Sequential read cycle: 35ns
  Write Erase performance
  Page program time: 300us(typ.)
  Block erase time: 2ms(typ.)
  Endurance 100K Erase/Program Cycles
  10-years data retention
  Command set
  Standard NAND command set
  Additional command support
  Sequential Cache Read
  Random Cache Read
  Cache Program
  Copy Back
  OTP Data Program, Data Lock by Page and Data Read
  Contact Winbond for block Lock feature
  Lowest power consumption
  Read: 10mA(typ.)
  Program/Erase: 10mA(typ.)
  CMOS standby: 10uA(typ.)

  W979H6KK Low Power DDR2 SDRAM

  VDD1 = 1.7~1.95V
  VDD2/VDDCA/VDDQ = 1.14V~1.30V
  Data width: x16
  Clock rate: up to 533 MHz
  Data rate: up to 1066 Mb/s/pad
  Four-bit pre-fetch DDR architecture
  Four internal banks
  Programmable READ and WRITE latencies (RL/WL)
  Programmable burst lengths: 4, 8, or 16
  Auto refresh: All bank refresh mode only
  Partial Array Self-Refresh (PASR):
  All bank or per bank, bank mask is supported but segment mask is not supported
  Pre-charge command: All bank or per bank
  Read with auto-pre-charge
  Write with auto-pre-charge
  Deep Power Down Mode (DPD Mode)
  Programmable output buffer driver strength
  Data mask (DM) for write data
  Clock Stop capability during idle periods
  Double data rate for data output
  Differential clock inputs
  Bidirectional differential data strobe
  Interface: HSUL_12
  JEDEC LPDDR2-S4B compliance
  Support KGD (Known Good Die) form
  Operating Temperature Range:
  40°C ≤ Tj ≤ 85°C

Package

8x8x0.8