トップページ
製品の捜索結果“ low ”, 0 項目の結果
  • 製品 (0)
検索結果が見つかりませんでした。テクニカルサポートにお問い合わせください。
キーワードの捜索結果“ low ”, 293項目の結果
  • 全て (293)
  • ウィンボンド electronica 2018カンファレンスにて新世代の超低消費電力モバイルDRAMソリューションを発表

    ウィンボンド・エレクトロニクスは今年11月にドイツで開催されるelectronica 2018で新世代の超低電力(ULP/Ultra low power)DRAMを発表する予定です。本製品は超低消費電力で高性能なため、ウェアラブルおよびポータブルデバイスや、IoTアプリケーションに適しています。 W948V6KBHXは最新のディープセルフリフレッシュ(DSR)テクノロジを搭載したウィンボンド社が初めて発表する製品です。256Mバイトの容量で、JEDEC規格のLPDDRと互換性があります。従来のモバイル機器のメモリと比べ、DSRテクノロジはスタンバイ電力消費量が40%低減され、バッテリ寿命を大幅...

  • Winbond releases Pseudo SRAM(W96 Series)

    At this year's eMEX 2006, Winbond Electronics launched the Pseudo SRAM with the largest density in the market. The W968D6B has the following key features: W96 Series Pseudo SRAM Conforms to CellularRAM 1.5G standard Density: 256Mb (16M x 16) Low operating voltage and input/output voltage: 1.8V Frequ...

  • Winbond releases 256Mb LowPower DRAM

    Winbond has launched a range of Low Power DRAM memory components designed to meet the needs of mobile devices. Shown at eMEX 2006 this year is the W988D6E / W988D2E 256MB Low Power DRAM. Its key features are: W98 Series LPSDR SDRAM (Single Data Rate Synchronous DRAM) Conforms to the JEDEC standard 2...

  • Winbond to Display Multiple Key Chips and IC Design Technologies at 2007 IIC-China

    Winbond 2007 IIC-China Shenzhen March 5-6 th , Shenzhen Convention and Exhibition Center Booth No.:2C25 Shanghai March 13-14 th, Shanghai Mart Booth No.:4C07 Winbond will attend the upcoming International IC China (IIC-China) Exhibition hosted by Global Sources. Multiple Winbond IC designs as well a...

  • Winbond Electronics Releases Largest Capacity Pseudo SRAM on the Market

    At this year's IIC 2007, Winbond Electronics launched the Pseudo SRAM with the largest density in the market. The W968D6B has the following key features: W96 Series Pseudo SRAM Conforms to CellularRAM 1.5G standard Density: 256Mb (16M x 16) Low operating voltage and input/output voltage: 1.8V Freque...

  • Winbond Electronics Unveils 256MB LowPower DRAM

    Winbond has launched a range of Low Power DRAM memory components for mobile devices. The W988D6E / W988D2E 256 MB Low Power DRAM will be shown at IIC 2007. LP SDR/DDR will become Mainstream In recent years there has been an upsurge in sales of replacement mobile phones. The driving force behind this...

  • Winbond Announces New Flash Memory Products-16Mb/32Mb SPI & 16Mb/32Mb/64Mb Parallel

    16Mb ,32Mb and 64 Mb parallel Flash memories 16Mb and 32Mb are 70ns, Boot Block and Single Bank Architecture 64Mb is 70ns, Boot Block and supports page mode, and Flexible Bank architecture 16 and 32 Mb SpiFlash ® memories support space-saving, cost-effective SO8 package Dual-Output SPI supports more...

  • Winbond Introduces products for broad range applications: 64Mb, 128Mb, and 256Mb SDRAM

    Winbond is introducing new SDRAM products for broad range applications, including: 64Mb (W9864 series), 128Mb (W9812 series), and 256Mb (W9825 series). These products will be on exhibition at the 2007 Taipei Semiconductor Industry Exhibition, and have passed SGS inspection, JGPSSI standards. The SDR...

  • Winbond Electronics Releases Largest Capacity CellularRAM on the Market

    SemiTech Taipei 2007, May, 10~12, 2007- With the emergence of a new generation of handheld devices, Winbond Electronics Corp. brings 256 Mb Pseudo SRAM to the market. Focusing on niche memory IDM, Winbond launches largest available 256 Mb CellularRAM standard PSRAM; this density is the best choice f...

  • Winbond announces new Flash Memory products-16Mb/32Mb SPI & 16Mb/32Mb/64Mb Parallel

    16Mb ,32Mb and 64 Mb parallel Flash memories o 16Mb and 32Mb are 70ns, Boot Block and Single Bank Architecture o 64Mb is 70ns, Boot Block and supports page mode, and Flexible Bank architecture 16 and 32 Mb SpiFlash® memories support space-saving, cost-effective SO8 package o Dual-Output SPI supports...

  • Winbond 16Mb, 32Mb Serial Flash Memories Production-Released; Set Course For Next Generation

    New 25X16, 25X32 SpiFlash® Memories: Fast, Efficient, Cost-Saving Solutions for Computer, Networking, Consumer Applications Dual-SPI Gains Market Acceptance; Quad-SPI on the Horizon SAN JOSE , Calif. – June 25, 2007 -- Winbond Electronics Corporation America, a wholly owned subsidiary of Winbond Ele...

  • Winbond Announces New Flash Memory Products-16Mb/32Mb/64Mb Parallel Flash

    16 Mb (W19B160B), 32 Mb (W19B320B) and 64 Mb (W19B640C) parallel flash memories 16 Mb and 32 Mb: 70 ns, Boot Block and Single Bank Architecture 64 Mb: 70 ns, Boot Block (supports page mode), and Flexible Bank Architecture Over the past 12 years, Winbond has devoted itself to the flash memory market,...

  • Winbond Introduces Industry's First QUAD-SPI Serial Flash Memory

    • W25Q16 SpiFlash Memory Offers Single, Dual, Quad I/Os in Space-Saving 8-Pin Package • 320Mhz-Equivalent Clock Rate Gives More than 6X Performance Boost • Cost-Effective, Code-Execution Alternative to Parallel NOR Flash SAN JOSE, Calif. – Aug 7, 2007 -- Winbond Electronics Corporation announced tod...

  • Winbond Launches Low Power Mobile Memory in 2007 Hongzhou eif

    Winbond Electronics Corp. will attend the upcoming Electronics & Information Fair, Hangzhou, China 2007(eif) Exhibition hosted by the Taiwan Electrical and Electronic Manufacturers' Association (TEEMA), Hangzhou Municipal Government and Trade Development Bureau of Ministry of Commerce during Sep.5 t...

  • Winbond to Display Multiple Key Chips and IC Design Technologies at Electronics & Information Fair, Hangzhou, China 2007

    Date : Sep/5/2007-Sep/8/2007 Location : Hangzhou Peace International Exhibition & Conference Center Booth : H13-23, G14-24 Winbond Electronics Corp. will attend the upcoming Electronics & Information Fair, Hangzhou, China 2007(eif) Exhibition hosted by the Taiwan Electrical and Electronic Manufactur...

TOP

Copyright © Winbond All Rights Reserved.

This website uses cookies to ensure you get the best experience on our website. Learn more
OK