This is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.
| Density | 256Mb | Industrial & Commercial Status | Mass Production |
|---|---|---|---|
| Vcc | 1.8V/1.8V | Frequency | Max clock rate 133 MHz |
| Package | 54VFBGA | Temperature Range | Industrial -40C~85C |
| Feature List | Supports asynchronous and burst operations,Random access time: 70ns, Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst, Burst wrap or sequential, tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz, Low-power features: TCR, PAR, DPD | ||
