The center pad is structural and not connected to any internal electrical signals. It can be left floating or connected to the device ground (GND pin). Avoid placement of exposed PCB vias under the pad.
Make sure to send a Write Enable (06h) instruction before any program, erase instructions.
It is a common misconception that /WP pin is for protecting the flash memory content. /WP actually prevents writing to the status register. Protection control bits in the Status Register have to configured first and then use the /WP pin as a hardware control. Software control protection without /WP pin can also be used. Refer to the Write Protection section in the datasheet for more details.
Quad Enabled bit (QE) is always enabled by default only meant quad mode is always available. It does not disable single or dual SPI modes. If a single or dual SPI instruction is sent, the flash will execute the instruction in single or dual mode accordingly.
All Winbond flash devices are MSL 3.
All Winbond flash are shipped in all erased state from the factory.
Poll the Status Register "BUSY bit". If BUSY becomes "0", it means the erase operation has completed.
You can migrate to W25R128JV. The W74M and W25R family are the same and interchangable. Winbond has migrated all W74M industrial applications to the W25R RPMC family.
You can request the reflow profile through Winbond's Technical Support link. https://www.winbond.com/hq/support/technical-support/?__locale=en
This VIO (SOP16 pin14) is not connected internally, there is no issue connecting VCC to this pin.
PSRAM is Pseudo-SRAM. CRAM is Cellular-RAM. Actually, CRAM is the most popular PSRAM for various applications in industry.
In JEDEC standard , the official naming is LPDDR (Low Power Double Data Rate).
Actually , LPDDR1 and LPDDR are the same .
Pseudo SRAM targets lower-density and lower throughput application, which is usually less than 128Mb and slower than 166MHz(Most cases are for 133 MHz). Otherwise, you could consider Low Power DDR.
Most difference between Mobile and Specialty DRAM is that Mobile dram emphasizes power saving property, particularly in standby mode. If your product is powerlizeded by cell, we will suggest mobile dram is prefered.
DDR3 is operating at VDD = VDDQ = 1.5V ± 0.075V
DDR3L is operating at Power supply = 1.35V (typ.) VDD = VDDQ = 1.283V to 1.45V. Winbond DDR3L is backward compatible to VDD = VDDQ = 1.5V ± 0.075V.
We offer Serial NOR Flash from 512Mb through 512Gb densities. We also have a complimentary Parallel NOR Flash GL family of products ranging from 32Mb through 512Mb densities.
Winbond is the leader in Serial NOR Flash both in units and in revenue. We offer Serial flash from 512Mb through 512Gb densities. These products are available in standard/dual and Quad SPI, as well as QPI mode for higher performance, at the same price and offer the flexibility to customers to use these products to suit their applications.
Our Parallel NOR Flash GL family of products ranging from 32Mb through 256Mb densities are industry standard compatible. Customers using our products can plug and play since they do not have to make any firmware or software changes to their existing designs.
Quad SPI power-up and SFDP (Serial Flash Discoverable Parameters) are Intel PC requirements that we offer. Fast write, Program/Erase Suspend/Resume, Burst with Wrap, Volatile status register write, complement array protection are features supporting mobile telephone and other applications. In addtion to this, for enhanced security, we offer OTP array and registers, software and hardware reset, programmable output drive and independent block lock features.
The W25CL family of low density products ranging from 1Mb through 4Mb replace the older generation 3V and 2.5V families, and these are available in production now. The EW 1.8V family from 1Mb through 8Mb densities is available in production now. The JV family of 3V products from 16Mb through 512Mb and the JW 1.8V family of products from 16Mb through 512Mb are also available now.
The popular Serial Flash products are offered in many different small packages . 208mil SOIC8 is the highest volume package and hence very cost effective. This is followed by the 150Mil SOIC package. For small form factor applications, the most popular package is the 6x5mm WSON8 followed by the 2x3mm USON8 package. Products in the 8x6mm BGA is for secure applications like the STB where the pins cannot be probed, and large density parts like the 256Mb or 512Mb are offered in the 8x6mm WSON or 300mil SOIC8 packages. For space constrained applications, packages like the WLCSP are popular, which are the smallest packages in the industry and we ofer KGD (Known Good Die) as well.
In the ideal condition, the Quad mode read performance of Serial NAND is almost the same as ONFI NAND in byte mode. Besides, Winbond Serial NAND supports the "Continuous Read Mode", which has double data transfer rate than ONFI NAND. So, the Serial NAND read performance is better than ONFI NAND.
We have developed a new family of products in the NAND area. Our NOR flash offering goes up to 512Mb and beyond this density, we will migrate to SLC NAND where we have developed products in the 1Gb, 2Gb, 4Gb and 8Gb densities. The Serial NAND products will be an extension of the NOR products with the same SPI interface. The primary focus of these products is to store code. Many of these products are used to store data in addition to code depending on the application.
NAND Flash is more cost effective compared to NOR flash at 512Mb densities and higher. NAND flash at higher densities (512Mb and above) is typically used for data storage. NOR Flash is commonly used from 512Kb through 512Mb densities for code storage.
The choice of DRAM type will depend on computing bandwidth of all IP in SOC. You need to figure out how much all IPs total computing needs(Usually video application occupy most bandwidth). Once deciding, you could choose 32 or 16 IO(usually) and how fast working frequency you use to achieve required throughput. Package type of DRAM is also usually subject to customer’s application. KGD or Package(how many balls) is most common.
For conventional DDR , DLL (Delay Lock Loop) is typically used . For LPDDR,DLL is not necessary and beneficial for power saving.
For speed, LPDDR2 affords 533MHz and LPDDR affords 200MHz.
The Open NAND Flash Interface (ONFI) is an industry Workgroup made up of more than 100 companies that build, design-in, or enable NAND Flash memory. It is dedicated to simplifying NAND Flash integration into consumer electronic products, computing platforms, and any other application that requires solid state mass storage. It defines standardized component-level interface specifications as well as connector and module form factor specifications for NAND Flash.
The SLC means Single-Level Cell and the one unit of SLC only can store 1bit information (0/1). The MLC means Multi-Level Cell. The MLC unit can store 2bits information (00/01/10/11). Therefore, MLC Flash devices cost
less and allow for higher storage density. SLC Flash devices provide better performance and greater reliability.
An bad block is one that contains at least one page that has more bad bits than can be corrected by the minimum required ECC. Block 0, block address 00h is guaranteed to be a valid block at the time of shipment. Before the device is shipped from the factory, it will be erased and invalid blocks are marked. All initial invalid blocks are marked with non-FFh at the first byte of spare area on the 1st or 2nd page.
Each page consists of the main data storage area and the spare data area. Typically, the main area is used for user data or code storage and the spare area is used for error management functions.
Yes, Winbond has permanent lock (Secured) NAND. Please contact Winbond sales force or agent to get the product ordering informaiton.
First, we should confirm both density are same or not. Then follow the datasheet specification, Every vendor’s data output time may a little bit different, we suggest customer to fine tune data latch time in SoC configuration after replacing different vendor DRAM.
The waveform relation between DQ read and DQS is edge-aligned. The waveform relation between DQ write and DQS is center-aligned.
If you already reserve A13 in PCB layout and the controller support 2Gb DDR3 DRAM also, you can replacement 1Gb DDR3 DRAM by 2Gb DDR3 DRAM. And please modify row/column address as 2Gb datasheet definition by software setting.
In asynchronous mode, the clock should be fixed low.
LPDDR with power saving features is mainly used for mobile applications, like mobile phone .
Generally, mobile application is battery-based and power consumption is a key concern.
Conventional DDR is mainly for ordinary applications.
LPDDR2 with power saving features is mainly used for mobile applications, like mobile phone . Generally, mobile application is battery-based and power consumption is a key concern. Conventional DDR2 is mainly for ordinary applications.
Yes, the 1bit ECC NAND means the NAND Flash only has 1 error bit in normal operation. In general, the NAND Flash spare area is 64Byte at least. The 64Byte is big enough to put 4bit ECC parity and META data from file system. So, host can use 4bit ECC algorithm and put the 4bit ECC parity the 64Byte spare area of the 1bit ECC NAND.
Yes, Winbond Seiral NAND provides the continuous read mode, which can backward compatible with major read commands used by SPI-NOR. The legacy platform can read out the boot code from Serial NAND in this mode to bring up the system.
Usually, SPD code is used for DRAM module, if you need our SPD file, please provide your SPD file to us, we can help to Modify SPD code for Winbond.
Please seek to our FAE’s help. We dedicate to statisfy customer’s need.
Winbond has much experience in helping customer completing through whole project. Our territory account will help you estimate your need and advise you a best solution when you inquiry. Please don’t hesitate to contact us if you need.
First, Winbond serial NAND can provide the 52MB/s data transfer rate to improve the system performance. Second, the PCB layout and size are reduced due to 8pin small WSON package. Third, the SoC also can simplify the memory interface and reduce the pin count by removing traditional parallel NAND interface. Overall, the system performance is improved and the sytem BOM cost is reduced.