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虚拟静态随机存取记忆体

This is a 256M bit CellularRAM™ compliant products, organized as 16M word by 16 bite; high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

Density 256Mb Status Mass Production
Vcc 1.8V/1.8V Frequency Max clock rate 133 MHz
Package 54VFBGA Tempture Range Industrial -40C~85C
Feature List Supports asynchronous and burst operations
Random access time: 70ns
Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst
Burst wrap or sequential
tACLK: 5.5ns at 133 MHz, 7ns at 104 MHz
Low-power features: TCR, PAR, DPD
Datasheet 线上购买

Technical Documentation

Resources

Video

Ultra Low Power DRAM A “Green” Memory in IoT Devices

  • File Type:Video
  • Updated:11/12/2018
Product Brief

Specialty DRAM and Mobile DRAM

Tags - ... More
  • File Type:pdf
  • Updated:30/05/2015
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